BSF110N06NT3GXUMA1

Infineon Technologies

Product No:

BSF110N06NT3GXUMA1

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Package:

MG-WDSON-2

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	3700 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs	46 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	11mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 33µA
Supplier Device Package	MG-WDSON-2
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	38W (Tc)
Series	OptiMOS™ 3
Package / Case	DirectFET™ Isometric ST
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	47A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk