BSS209PW L6327

Infineon Technologies

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BSS209PW L6327

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PG-SOT323

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Description:

MOSFET P-CH 20V 580MA SOT323-3

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	89.9 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs	1.38 nC @ 4.5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	550mOhm @ 580mA, 4.5V
Product Status	Obsolete
Vgs(th) (Max) @ Id	1.2V @ 3.5µA
Supplier Device Package	PG-SOT323
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	300mW (Ta)
Series	OptiMOS™
Package / Case	SC-70, SOT-323
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	580mA (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)