BUK7E13-60E,127

NXP USA Inc.

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BUK7E13-60E,127

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Package:

I2PAK

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Description:

MOSFET N-CH 60V 58A I2PAK

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1730 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	22.9 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	13mOhm @ 15A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	I2PAK
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	96W (Ta)
Series	Automotive, AEC-Q101, TrenchMOS™
Package / Case	TO-262-3 Long Leads, I²Pak, TO-262AA
Technology	MOSFET (Metal Oxide)
Mfr	NXP USA Inc.
Current - Continuous Drain (Id) @ 25°C	58A (Ta)
Vgs (Max)	±20V
Package	Tube