FS13MR12W2M1HB70BPSA1

Infineon Technologies

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LOW POWER EASY

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Operating Temperature	-
FET Feature	-
Configuration	6 N-Channel (3-Phase Bridge)
Input Capacitance (Ciss) (Max) @ Vds	6050pF @ 800V
Gate Charge (Qg) (Max) @ Vgs	200nC @ 18V
Mounting Type	-
Rds On (Max) @ Id, Vgs	11.7mOhm @ 62.5A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	5.15V @ 28mA
Supplier Device Package	-
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Series	CoolSiC™
Package / Case	-
Technology	Silicon Carbide (SiC)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	62.5A (Tc)
Package	Tray