GAN7R0-150LBEZ

Nexperia USA Inc.

Product No:

GAN7R0-150LBEZ

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Package:

3-FCLGA (3.2x2.2)

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Description:

150 V, 7 MOHM GALLIUM NITRIDE (G

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Operating Temperature	-40°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	865 pF @ 85 V
Gate Charge (Qg) (Max) @ Vgs	7.6 nC @ 5 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7mOhm @ 10A, 5V
Product Status	Active
Vgs(th) (Max) @ Id	2.1V @ 5mA
Supplier Device Package	3-FCLGA (3.2x2.2)
Drain to Source Voltage (Vdss)	150 V
Power Dissipation (Max)	28W
Series	-
Package / Case	3-VLGA
Technology	GaNFET (Gallium Nitride)
Mfr	Nexperia USA Inc.
Current - Continuous Drain (Id) @ 25°C	28A
Vgs (Max)	+6V, -4V
Drive Voltage (Max Rds On, Min Rds On)	5V
Package	Tape & Reel (TR)
Base Product Number	GAN7R0