GT045N10M

Goford Semiconductor

Product No:

GT045N10M

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Package:

TO-263

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Description:

N100V, 120A,RD<4.5M@10V,VTH2V~4V

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	4198 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	60 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	4.5mOhm @ 30A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	TO-263
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	180W (Tc)
Series	-
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	120A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)