MSCSM70TLM10C3AG

Microchip Technology

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MSCSM70TLM10C3AG

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Module

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PM-MOSFET-SIC-SBD-SP3F

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Operating Temperature	-40°C ~ 175°C (TJ)
FET Feature	-
Configuration	4 N-Channel
Input Capacitance (Ciss) (Max) @ Vds	9000pF @ 700V
Gate Charge (Qg) (Max) @ Vgs	430nC @ 20V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	9.5mOhm @ 80A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 8mA (Typ)
Supplier Device Package	Module
Drain to Source Voltage (Vdss)	700V
Series	-
Package / Case	Module
Technology	Silicon Carbide (SiC)
Power - Max	690W (Tc)
Mfr	Microchip Technology
Current - Continuous Drain (Id) @ 25°C	241A (Tc)
Package	Box
Base Product Number	MSCSM70