RJK0601DPN-E0#T2

Renesas

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RJK0601DPN-E0#T2

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TO-220ABS

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Description:

RJK0601DPN - N-CHANNEL MOSFET 60

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Operating Temperature	150°C
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	10000 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	141 nC @ 10 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	3.1mOhm @ 55A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	4V @ 1mA
Supplier Device Package	TO-220ABS
Drain to Source Voltage (Vdss)	60 V
Power Dissipation (Max)	200W (Tc)
Series	-
Package / Case	TO-220-3
Technology	MOSFET (Metal Oxide)
Mfr	Renesas
Current - Continuous Drain (Id) @ 25°C	110A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Bulk