RV8C010UNHZGG2CR

Rohm Semiconductor

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RV8C010UNHZGG2CR

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Package:

DFN1010-3W

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Description:

MOSFET N-CH 20V 1A DFN1010-3W

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	470mOhm @ 500mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	DFN1010-3W
Drain to Source Voltage (Vdss)	20 V
Power Dissipation (Max)	1W
Series	Automotive, AEC-Q101
Package / Case	3-XFDFN
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	1A (Ta)
Vgs (Max)	±8V
Package	Tape & Reel (TR)
Base Product Number	RV8C010