SCTWA30N120

STMicroelectronics

Product No:

SCTWA30N120

Manufacturer:

Package:

HiP247™ Long Leads

Batch:

Datasheet:

Description:

IC POWER MOSFET 1200V HIP247

Quantity:

Delivery:

Payment:

In Stock : Please Inquiry

Please send RFQ , we will respond immediately.

Contact Name

Company name

Telephone

Country

Quantity

Operating Temperature	-55°C ~ 200°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1700 pF @ 400 V
Gate Charge (Qg) (Max) @ Vgs	105 nC @ 20 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	100mOhm @ 20A, 20V
Product Status	Active
Vgs(th) (Max) @ Id	3.5V @ 1mA (Typ)
Supplier Device Package	HiP247™ Long Leads
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	270W (Tc)
Series	-
Package / Case	TO-247-3
Technology	SiCFET (Silicon Carbide)
Mfr	STMicroelectronics
Current - Continuous Drain (Id) @ 25°C	45A (Tc)
Vgs (Max)	+25V, -10V
Drive Voltage (Max Rds On, Min Rds On)	20V
Package	Tube
Base Product Number	SCTWA30