SSM6K217FE,LF

Toshiba Semiconductor and Storage

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SSM6K217FE,LF

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Package:

ES6

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Description:

MOSFET N-CH 40V 1.8A ES6

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	130 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	1.1 nC @ 4.2 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	195mOhm @ 1A, 8V
Product Status	Active
Vgs(th) (Max) @ Id	1.2V @ 1mA
Supplier Device Package	ES6
Drain to Source Voltage (Vdss)	40 V
Power Dissipation (Max)	500mW (Ta)
Series	U-MOSVII-H
Package / Case	SOT-563, SOT-666
Technology	MOSFET (Metal Oxide)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	1.8A (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	1.8V, 8V
Package	Tape & Reel (TR)
Base Product Number	SSM6K217