SSM6L56FE,LM

Toshiba Semiconductor and Storage

Product No:

SSM6L56FE,LM

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Package:

ES6

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Description:

SMALL-SIGNAL MOSFET 2 IN 1 NCH +

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Operating Temperature	150°C
FET Feature	Logic Level Gate, 1.5V Drive
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	55pF @ 10V, 100pF @ 10V
Gate Charge (Qg) (Max) @ Vgs	1nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	235mOhm @ 800mA, 4.5V, 390mOhm @ 800mA, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1V @ 1mA
Supplier Device Package	ES6
Drain to Source Voltage (Vdss)	20V
Series	-
Package / Case	SOT-563, SOT-666
Technology	MOSFET (Metal Oxide)
Power - Max	150mW (Ta)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	800mA (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM6L56