TTC011B,Q

Toshiba Semiconductor and Storage

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TTC011B,Q

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TO-126N

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Description:

PB-FPOWERTRANSISTORTO-126NPC=10W

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Operating Temperature	150°C (TJ)
Frequency - Transition	100MHz
Current - Collector (Ic) (Max)	1 A
Vce Saturation (Max) @ Ib, Ic	1.5V @ 50mA, 500mA
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	230 V
Supplier Device Package	TO-126N
Series	-
Transistor Type	NPN
Package / Case	TO-225AA, TO-126-3
Power - Max	1.5 W
Mfr	Toshiba Semiconductor and Storage
Current - Collector Cutoff (Max)	200nA (ICBO)
Package	Tray
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 100mA, 5V