BSP603S2LNT

Infineon Technologies

Product No:

BSP603S2LNT

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Package:

PG-SOT223-4-21

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Description:

N-CHANNEL POWER MOSFET

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	1390 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	33mOhm @ 2.6A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 50µA
Supplier Device Package	PG-SOT223-4-21
Drain to Source Voltage (Vdss)	55 V
Power Dissipation (Max)	1.8W (Ta)
Series	OptiMOS®
Package / Case	TO-261-4, TO-261AA
Technology	MOSFET (Metal Oxide)
Mfr	Infineon Technologies
Current - Continuous Drain (Id) @ 25°C	5.2A (Ta)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Bulk