DMN10H170SFG-13

Diodes Incorporated

Product No:

DMN10H170SFG-13

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Package:

PowerDI3333-8

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Description:

MOSFET N-CH 100V PWRDI3333

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	870.7 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs	14.9 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	122mOhm @ 3.3A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	3V @ 250µA
Supplier Device Package	PowerDI3333-8
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	940mW (Ta)
Series	-
Package / Case	8-PowerVDFN
Technology	MOSFET (Metal Oxide)
Mfr	Diodes Incorporated
Current - Continuous Drain (Id) @ 25°C	2.9A (Ta), 8.5A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	DMN10