G1003B

Goford Semiconductor

Product No:

G1003B

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Package:

SOT-23-3L

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Description:

N100V,RD(MAX)<170M@10V,RD(MAX)<1

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	760 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	30 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	130mOhm @ 1A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2V @ 250µA
Supplier Device Package	SOT-23-3L
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3.3W
Series	-
Package / Case	TO-236-3, SC-59, SOT-23-3
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	3A
Vgs (Max)	±20V
Package	Tape & Reel (TR)