GC11N65D5

Goford Semiconductor

Product No:

GC11N65D5

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Package:

8-DFN (4.9x5.75)

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Description:

N650V, 11A,RD<360M@10V,VTH2.5V~4

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	901 pF @ 50 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	360mOhm @ 5.5A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	4V @ 250µA
Supplier Device Package	8-DFN (4.9x5.75)
Drain to Source Voltage (Vdss)	650 V
Power Dissipation (Max)	78W (Tc)
Series	G
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Goford Semiconductor
Current - Continuous Drain (Id) @ 25°C	11A (Tc)
Vgs (Max)	±30V
Drive Voltage (Max Rds On, Min Rds On)	10V
Package	Tape & Reel (TR)