GT30J341,Q

Toshiba Semiconductor and Storage

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GT30J341,Q

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TO-3P(N)

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Description:

IGBT TRANS 600V 30A TO3PN

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Operating Temperature	175°C (TJ)
Input Type	Standard
Test Condition	300V, 30A, 24Ohm, 15V
Reverse Recovery Time (trr)	50 ns
Switching Energy	800µJ (on), 600µJ (off)
Current - Collector (Ic) (Max)	59 A
Mounting Type	Through Hole
Product Status	Active
Voltage - Collector Emitter Breakdown (Max)	600 V
Supplier Device Package	TO-3P(N)
Td (on/off) @ 25°C	80ns/280ns
Current - Collector Pulsed (Icm)	120 A
Series	-
Vce(on) (Max) @ Vge, Ic	2V @ 15V, 30A
Package / Case	TO-3P-3, SC-65-3
Power - Max	230 W
Mfr	Toshiba Semiconductor and Storage
Package	Tray
Base Product Number	GT30J341