RS1P090ATTB1

Rohm Semiconductor

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RS1P090ATTB1

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8-HSOP

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Description:

PCH -100V -33A POWER MOSFET: RS1

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	5650 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs	125 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	34mOhm @ 9A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSOP
Drain to Source Voltage (Vdss)	100 V
Power Dissipation (Max)	3W (Ta), 40W (Tc)
Series	-
Package / Case	8-PowerTDFN
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	9A (Ta), 33A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Package	Tape & Reel (TR)
Base Product Number	RS1P090