RV2E014AJT2CL

Rohm Semiconductor

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RV2E014AJT2CL

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Package:

DFN1006-3

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Description:

NCH 30V 1.4A, DFN1006-3, SMALL S

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Operating Temperature	150°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	105 pF @ 15 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	290mOhm @ 1.4A, 4.5V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 1mA
Supplier Device Package	DFN1006-3
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	400mW (Ta)
Series	-
Package / Case	3-XFDFN
Technology	MOSFET (Metal Oxide)
Mfr	Rohm Semiconductor
Current - Continuous Drain (Id) @ 25°C	700mA (Ta)
Vgs (Max)	±12V
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 4.5V
Package	Tape & Reel (TR)