SI4590DY-T1-GE3

Vishay Siliconix

Product No:

SI4590DY-T1-GE3

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Package:

8-SOIC

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Description:

MOSFET N/P CHAN 100V SO8 DUAL

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	N and P-Channel
Input Capacitance (Ciss) (Max) @ Vds	360pF @ 50V
Gate Charge (Qg) (Max) @ Vgs	11.5nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	57mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 250µA
Supplier Device Package	8-SOIC
Drain to Source Voltage (Vdss)	100V
Series	TrenchFET®
Package / Case	8-SOIC (0.154", 3.90mm Width)
Technology	-
Power - Max	2.4W, 3.4W
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	3.4A, 2.8A
Package	Tape & Reel (TR)
Base Product Number	SI4590