SICW080N120Y4-BP

Micro Commercial Co

Product No:

SICW080N120Y4-BP

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Package:

TO-247-4

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Description:

N-CHANNEL MOSFET,TO-247-4

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Operating Temperature	-55°C ~ 175°C (TJ)
FET Feature	-
FET Type	N-Channel
Input Capacitance (Ciss) (Max) @ Vds	890 pF @ 1000 V
Gate Charge (Qg) (Max) @ Vgs	41 nC @ 18 V
Mounting Type	Through Hole
Rds On (Max) @ Id, Vgs	85mOhm @ 20A, 18V
Product Status	Active
Vgs(th) (Max) @ Id	3.6V @ 5mA
Supplier Device Package	TO-247-4
Drain to Source Voltage (Vdss)	1200 V
Power Dissipation (Max)	223W (Tc)
Series	-
Package / Case	TO-247-4
Technology	SiC (Silicon Carbide Junction Transistor)
Mfr	Micro Commercial Co
Current - Continuous Drain (Id) @ 25°C	39A
Vgs (Max)	+22V, -8V
Drive Voltage (Max Rds On, Min Rds On)	18V
Package	Bulk
Base Product Number	SICW080