SIZ200DT-T1-GE3

Vishay Siliconix

Product No:

SIZ200DT-T1-GE3

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Package:

8-PowerPair® (3.3x3.3)

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Description:

MOSFET N-CH DUAL 30V

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Operating Temperature	-55°C ~ 150°C (TJ)
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	1510pF @ 15V, 1600pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	28nC @ 10V, 30nC @ 10V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	5.5mOhm @ 10A, 10V, 5.8mOhm @ 10A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.4V @ 250µA
Supplier Device Package	8-PowerPair® (3.3x3.3)
Drain to Source Voltage (Vdss)	30V
Series	TrenchFET® Gen IV
Package / Case	8-PowerWDFN
Technology	MOSFET (Metal Oxide)
Power - Max	4.3W (Ta), 33W (Tc)
Mfr	Vishay Siliconix
Current - Continuous Drain (Id) @ 25°C	22A (Ta), 61A (Tc), 22A (Ta), 60A (Tc)
Package	Tape & Reel (TR)
Base Product Number	SIZ200