SSM6N17FU(TE85L,F)

Toshiba Semiconductor and Storage

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SSM6N17FU(TE85L,F)

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Package:

US6

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Description:

X34 SMALL LOW RON DUAL NCH MOSFE

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Operating Temperature	150°C
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	7pF @ 3V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	20Ohm @ 10mA, 4V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 1µA
Supplier Device Package	US6
Drain to Source Voltage (Vdss)	50V
Series	-
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Power - Max	200mW (Ta)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM6N17