SSM6N48FU,LF

Toshiba Semiconductor and Storage

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SSM6N48FU,LF

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US6

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Description:

X34 PB-F SOT-363 S-MOS (LF) TRAN

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Operating Temperature	150°C
FET Feature	-
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	15.1pF @ 3V
Gate Charge (Qg) (Max) @ Vgs	-
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	3.2Ohm @ 10mA, 4V
Product Status	Active
Vgs(th) (Max) @ Id	1.5V @ 100µA
Supplier Device Package	US6
Drain to Source Voltage (Vdss)	30V
Series	U-MOSIII
Package / Case	6-TSSOP, SC-88, SOT-363
Technology	MOSFET (Metal Oxide)
Power - Max	300mW
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	100mA (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM6N48