SSM6N815R,LF

Toshiba Semiconductor and Storage

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SSM6N815R,LF

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Package:

6-TSOP-F

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Description:

MOSFET 2N-CH 100V 2A 6TSOPF

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Operating Temperature	150°C
FET Feature	Logic Level Gate, 4V Drive
Configuration	2 N-Channel (Dual)
Input Capacitance (Ciss) (Max) @ Vds	290pF @ 15V
Gate Charge (Qg) (Max) @ Vgs	3.1nC @ 4.5V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	103mOhm @ 2A, 10V
Product Status	Active
Vgs(th) (Max) @ Id	2.5V @ 100µA
Supplier Device Package	6-TSOP-F
Drain to Source Voltage (Vdss)	100V
Series	U-MOSVIII-H
Package / Case	6-SMD, Flat Leads
Technology	MOSFET (Metal Oxide)
Power - Max	1.8W (Ta)
Mfr	Toshiba Semiconductor and Storage
Current - Continuous Drain (Id) @ 25°C	2A (Ta)
Package	Tape & Reel (TR)
Base Product Number	SSM6N815