UPA2730TP-E2-AZ

Renesas

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UPA2730TP-E2-AZ

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Package:

8-HSOP

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Description:

UPA2730 - POWER FIELD-EFFECT TRA

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Operating Temperature	150°C
FET Feature	-
FET Type	P-Channel
Input Capacitance (Ciss) (Max) @ Vds	4670 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs	97 nC @ 10 V
Mounting Type	Surface Mount
Rds On (Max) @ Id, Vgs	7mOhm @ 7.5A, 10V
Product Status	Obsolete
Vgs(th) (Max) @ Id	2.5V @ 1mA
Supplier Device Package	8-HSOP
Drain to Source Voltage (Vdss)	30 V
Power Dissipation (Max)	3W (Ta), 40W (Tc)
Series	-
Package / Case	8-PowerSOIC (0.173", 4.40mm Width)
Technology	MOSFET (Metal Oxide)
Mfr	Renesas
Current - Continuous Drain (Id) @ 25°C	20A (Ta), 42A (Tc)
Vgs (Max)	±20V
Drive Voltage (Max Rds On, Min Rds On)	4V, 10V
Package	Bulk